0.18-<tex>$muhboxm$</tex>Nondestructive Readout FeRAM Using Charge Compensation Technique

Abstract

A nondestructive readout (NDRO) FeRAM using a 0.18-/spl mu/m CMOS technology has been developed. Readout voltages across the ferroelectric lower than the coercive voltage allowed the FeRAM to achieve high read endurance exceeding required performance for system LSIs, 10/sup 16/ read cycles. The NDRO approach uses a newly developed charge compensation technique to correct the process variations in threshold voltage of neighboring readout transistors, leading to a wide NDRO operation margin over a supply voltage range from 1.1 to 1.8 V.