Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 2007 · 32 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsGainGallium Nitride (Gan) MaterialsGallium Nitride Microwave Integrated CircuitsGallium Nitride Power AmplifiersGan-based High-frequency Devices
A 0.2um T-gate GaN-SiC HEMT technology with fT 70 GHz are used to achieve GaN Darlington MMIC Amplifiers with bandwidths up to 18 GHz. Both conventional Darlington and Cascoded-Darlington feedback designs were fabricated and measured. The Darlington Cascode obtains 14.7 dB gain and a bandwidth of 0.05-12.3 GHz. The conventional Darlington obtains 11 dB gain and a record 0.05-18.7 GHz multi-decade bandwidth for a GaN Darlington. These are the highest BWs reported for GaN Darlington MMIC amplifiers. In addition, P1dB 1 Watt and > 40 dBm OIP3 was obtained beyond 4 GHz. To our knowledge, these results represent the widest bandwidths so far demonstrated for fully monolithic GaN Darlington MMICs.
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1 - 8-GHz GaN-based power amplifier using flip-chip bonding
Jin Xu, Yifeng Wu, S. Keller et al. · IEEE Microwave and Guided Wave Letters · 1999 · 50 citations
Broad-band microwave power amplifiers in GaN technology
K. Krishnamurthy, S. Keller, Umesh K. Mishra et al. · 2002 · 10 citations