IEEE Journal of Quantum Electronics · 1973 · 41 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsLaser PhysicsLuminescent MaterialsOptical Properties Of SemiconductorsOptical SourcesSemiconductor HeterostructuresSemiconductor LasersGain SaturationHeterostructure LasersOptical ConfinementSaturationSaturation BehaviorSpontaneous EmissionStimulated EmissionThreshold Behavior
Saturation of the spontaneous emission intensity from stripe-geometry double-heterostructure junction lasers has been observed for currents from threshold up to three times threshold. The present observation of saturated luminescence depends upon the spatial uniformity of the saturated gain obtained in a laser with a thin active region ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\sim0.2-0.3 \mu</tex> m) and weak optical confinement. In lasers with thicker active regions ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\sim1 \mu</tex> m) and stronger optical confinement, the spontaneous emission does not saturate at threshold but continues to increase with current at a reduced rate. The increasing emission is shown to originate in spatial regions where the field intensity is low and consequently the gain is not saturated. At pumping levels high above threshold, the nonuniform saturation of the gain (transverse spatial hole burning) leads to increased gain and finally oscillation for other transverse modes.
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Quantum-Mechanical Rate Equations for Semiconductor Lasers
H. Haug · Physical Review · 1969 · 190 citations
Spectral Output of Semiconductor Lasers
H. Statz, C. L. Tang, J. M. Lavine · Journal of Applied Physics · 1964 · 103 citations