Publication | Closed Access
Modeling and Characterization of Program / Erasure Speed and Retention of TiN-gate MANOS (Si-Oxide-SiNx-Al2O3-Metal Gate) Cells for NAND Flash Memory
15
Citations
2
References
2007
Year
Unknown Venue
Non-volatile MemoryTin-gate ManosEngineeringProgram EfficiencyComputer ArchitectureNand Flash MemoryChemical EngineeringNanoelectronicsErasure MechanismElectrical EngineeringNanotechnologyFlash MemoryComputer EngineeringMicroelectronicsManos CellMicrofabricationSurface ScienceApplied PhysicsSemiconductor MemorySi-oxide-sinx-al2o3-metal Gate
In this study, physical properties of different trapping nitrides were extracted, and the program efficiency of MANOS cell was explained. We also showed shallow traps were generated at trapping nitride by etching damage, and this could be cured resulting great improvement of cell performance. Lastly, erasure mechanism of TiN-gate MANOS cell was discussed with some experimental and modeling results.
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