IEEE Transactions on Electron Devices · 1967 · 22 citations · 5 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave MeasurementsMicrowave OscillatorsMicrowave ResonatorsMicrowave Semiconductor DevicesCavity ResonatorsGaas Microwave Integrated CircuitsGaas OscillatorsMicrowave CavitiesMicrowave Circuit ModelingMicrowave DevicesReactance TheoryTransit Frequency
Experiments have been performed to measure the parameters of epitaxial GaAs cavity controlled Gunn oscillators with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nl \sim 10^{12}</tex> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> over the frequency range of 7 to 20 GHz. It is found that individual devices exhibit a large variation of transit frequency with bias voltage and this is related to their performance in a cavity. The real and imaginary parts of the device reactance under cavity controlled operating conditions and the RF voltage swing across the device have been measured. These are discussed in the light of presently available analytical theories.
5
Some aspects of Gunn effect oscillators
P.N. Robson, Salah Mahrous · Radio and Electronic Engineer · 1965 · 28 citations