IEEE Transactions on Microwave Theory and Techniques · 1991 · 23 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesMicrowave System DesignRadio-frequency Integrated CircuitsGaas Microwave Integrated CircuitsMillimeter-wave Integrated CircuitsNoise FigurePackaging TechniquesPhase ShiftersPhased Array GainPhased ArraysPower Output
A complex wideband transmit/receive module that achieves performance levels superior to any MMIC module is described. Peak performance within the octave 3.0 to 6.0 GHz band includes a power output of 21 W at S-band and 19 W at C-band, a noise figure of 3.9 to 5.0 dB, 30 to 38 dB of receive gain, 25 to 26 dBm output IP/sub 3/, 40 dB of gain control in 256 steps, dual receive channels with independent amplitude and phase control, and an 8-bit phase shifter with less than 1 degree calibrated RMS phase error. Total GaAs area is 146 mm/sup 2/ with 170 mm of total gate periphery. The module incorporates a compact digital interface, requires only three supply voltages, and utilizes advanced packaging techniques, resulting in a size compatible with a grating lobe free grid spacing.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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A single chip 2.20 GHz T/R module
S.L.G. Chu, T.E. Kazior, Anthony Bertrand et al. · 1990 · 11 citations