Gate-All-Around Junctionless Nanowire MOSFET With Improved Low-Frequency Noise Behavior

Abstract

We present n-type gate-all-around (GAA) junctionless nanowire field-effect transistor (JL-NWFET) along with low-frequency noise (LFN) with respect to channel doping and the gate bias voltage. Irrespective of doping level in the channel, which is the same as that of source/drain, the JL-NWFET shows approximately five orders of magnitude lower spectral noise than the inversion-mode counterpart. LFN in JL-NWFET is also found less sensitive to gate bias voltage and to the frequency. The superior LFN behavior in GAA JL-NWFET is attributed to the conduction of carriers inside the uniformly doped nanowire channel. JL-NWFET-based sensing elements can thus be suitable in physical transducers to maximize the detection limits.