Concepedia

Low-threshold continuous-wave surface emitting lasers with etched void confinement

C.C. Hansing, H. Deng, Diana L. Huffaker, D.G. Deppe, B. G. Streetman, J. Sarathy

IEEE Photonics Technology Letters · 1994 · 38 citations · 5 references

DOI

Concepts

Abstract

Data are presented demonstrating low threshold continuous wave operation of AlAs/GaAs/InGaAs vertical cavity surface emitting lasers. Continuous wave thresholds of 470 μA have been realized for device diameters of /spl sim/4 μm, and 1.1 mA for a device diameter of 10 μm. A two-step molecular beam epitaxial growth process is used which results in a buried etched void surrounding the active cavity of the laser.

References

5

Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization

J. L. Jewell, J. P. Harbison, Axel Scherer et al. · IEEE Journal of Quantum Electronics · 1991 · 524 citations

, , +13

Submilliamp threshold vertical-cavity laser diodes

R.S. Geels, L.A. Coldren · Applied Physics Letters · 1990 · 109 citations

, , +12

Low threshold buried heterostructure vertical cavity surface emitting laser

Constance J. Chang-Hasnain, Y.A. Wu, G. S. Li et al. · Applied Physics Letters · 1993 · 45 citations

, , +12

InGaAs-GaAs quantum well vertical-cavity surface-emitting laser using molecular beam epitaxial regrowth

Chun Lei, T. J. Rogers, D. G. Deppe et al. · Applied Physics Letters · 1991 · 27 citations

, , +12

Low threshold voltage vertical cavity surface-emitting laser

K.L. Lear, Scott Chalmers, Kevin Killeen · Electronics Letters · 1993 · 23 citations · Full text

, , +12