Electronics Letters · 1983 · 14 citations · 2 references
EngineeringMaterials EngineeringMaterials ScienceBiomedical OpticsOptical MaterialsOptoelectronicsEtching ProcessesLaser DiodesLaser PhysicsOptical SourcesSemiconductor HeterostructuresSemiconductor LasersFacet CoatingsHeterostructure LasersLaser Surface EtchingLasersOptical Gain MaterialsSemiconductor Laser DiodesSemiconductor Laser Fabrication
The reactive-ion-etching technique in forming facet mirrors for 1.5 μm GaInAs/InP buried-heterostructure (BH) lasers is reported. Room-temperature CW operation has been achieved with BH lasers having one of the facets formed by RIE and metallic coating and the other by cleaving. The laser with 330 μm long cavity has a 110 mA threshold.
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GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet
L.A. Coldren, Kenichi Iga, B.I. Miller et al. · Applied Physics Letters · 1980 · 105 citations