19.4: Low Temperature PECVD a‐Si:H TFT for Plastic Substrates

Abstract

Abstract Using a suitable dilution process at PECVD improves quality of gate nitride and a‐Si:H channel at low temperature. By using suitable Ar dilution in gate nitride and H 2 dilution in a‐Si:H channel, the low temperature a‐Si:H TFTs have not only similar channel mobility and threshold voltage, but also similar stress induced threshold voltage shift as usual a‐Si:H TFTs.