New low current memory modes with giant magneto-resistance materials

Abstract

Memory cells made with giant magnetoresistance (GMR) material have substantial differences in resistance for the two storage states even without the presence of sense current. Because of the large outputs, static memory cells requiring reduced currents can be made. Additional memory modes can be achieved because the resistance change depends on the angle between the magnetization in the two layers rather than the angle between the sense current and the magnetization.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>