IEEE Journal of Quantum Electronics · 1996 · 29 citations · 20 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesOptical Communication SystemsOptical InterconnectsSemiconductor Device MaterialsSemiconductor LasersWide Band Gap SemiconductorsBit Error RateCryogenic SystemsHigh-speed ModulationHigh-speed Optical ModulationModulation BandwidthPower Conversion EfficiencyThreshold VoltageVertical-cavity Surface-emitting Lasers
We describe the design of GaAs-AlGaAs vertical-cavity surface-emitting lasers (VCSELs) that are optimized for operation at very low temperatures and the experimental demonstration of a free-space optical interconnect for cryogenic electronic systems using a VCSEL. We demonstrate high-speed modulation of the optical link at a data rate of up to 2 Gb/s at 77 K, with a very low bit-error rate of <10/sup -13/, and thermally stable operation is achieved over a wide range of cryogenic temperatures without laser bias current compensation. Cryogenic VCSELs with excellent lasing characteristics have been achieved over the entire temperature range from 150 K to 6 K, including high output power (22 mW), high power-conversion efficiency (32%), high slope efficiency (/spl sim/100%), low threshold voltage (1.75 V) and current (1.7 mA), as well as a high-modulation bandwidth (12 GHz) for a 16 /spl mu/m diameter device at 80 K.
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Low threshold planarized vertical-cavity surface-emitting lasers
R.S. Geels, S. Corzine, J.W. Scott et al. · IEEE Photonics Technology Letters · 1990 · 184 citations