Electrical Characteristics of LaAlO[sub 3] Gate Dielectrics Prepared by High-Pressure Hydrogen Post-Deposition Annealing

Abstract

To improve electrical characteristics of high-k gate dielectrics, post-deposition annealing (PDA) was performed in high-pressure pure hydrogen ambient. High-pressure PDA samples show excellent electrical characteristics such as low fixed charge density, and reduced interface state density confirmed by capacitance-voltage analysis and conductance technique, respectively. They also showed no frequency dependency and a hysteresis of . The leakage current decreases remarkably from 0.23 to at the gate voltage of below . The excellent electrical characteristics of high-pressure hydrogen annealed sample can be explained by enhanced hydrogen passivation of defects in high-k dielectric.