High-current-gain InGaAs/InP double-heterojunction bipolar transistors grown by metal organic vapor phase epitaxy

Abstract

By inserting a thin n-InP layer between the p/sup +/-InGaAs base and the n-InP collector excellent transistor characteristics were obtained. The DE and small-signal current gains were 7000 and 11000, respectively, which are the highest values reported for transistors of this type. The transistors were also operated in a collector-up configuration with DE gains as large as 2500.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>