Electronics Letters · 1999 · 54 citations · 6 references
Natural SciencesElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesThin FilmsCooling SystemsHigh-temperature MaterialsThin Film Thermal PropertiesHigh-temperature Device OperationHigh-temperature ElectronicsSubstrate Temperature Effects
Thin film SiGe heterostructure coolers have been fabricated and characterised. Cooling by as much as 1.1 K at room temperature and 1.6 K at a substrate temperature of 70°C over a 3 µm Si/SiGe superlattice barrier has been measured. This corresponds to cooling power densities of hundreds of watts per square centimetre.
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Thermal conductivity of Si–Ge superlattices
Seung Min Lee, David G. Cahill, R. Venkatasubramanian · Applied Physics Letters · 1997 · 706 citations
Heterostructure integrated thermionic coolers
Ali Shakouri, John E. Bowers · Applied Physics Letters · 1997 · 340 citations
Thermionic emission cooling in single barrier heterostructures
Ali Shakouri, Chris LaBounty, Joachim Piprek et al. · Applied Physics Letters · 1999 · 107 citations