Concepedia

Abstract

The Letter reports epitaxial liftoff and direct bonding of GaAs/AlxGa1−xAs heterostructure device arrays and continuous films, using a single transparent polymer membrane to support the material during etch of the sacrificial layer and to manipulate it into position for bonding. Au–Sn eutectic alloy bonding leads to a metallurgical bond in minutes. Photoluminescence and current–voltage characteristics show that material quality is not substantially degraded in the transfer process.

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