Applied Physics Letters · 2010 · 83 citations · 28 references
EngineeringElectrical EngineeringElectronic MaterialsOptoelectronicsSemiconductor MaterialsCarrier TransportDiffusion In SolidsOptical Properties Of SemiconductorsSemiconductor PhysicsUltrafast OpticsAmbipolar DiffusionCarrier DiffusionCarrier DynamicsCarrier Transport In SemiconductorsCarrier Transport MechanismsDiffusion CoefficientsPhotocarrier DynamicsUltrafast Carrier Dynamics
The ambipolar diffusion of carriers in bulk GaAs is studied by using an ultrafast pump-probe technique with a high spatial resolution. Carriers with a pointlike spatial profile are excited by a tightly focused pump laser pulse. The spatiotemporal dynamics of the carriers are monitored by a time-delayed and spatially scanned probe pulse. Ambipolar diffusion coefficients are deduced from linear fits to the expansion of the area of the profiles, and are found to decrease from about 170 cm2 s−1 at 10 K to about 20 cm2 s−1 at room temperature. Our results are consistent with those deduced from previously measured mobilities.
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