Progress in Photovoltaics Research and Applications · 2007 · 18 citations · 6 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor Device MaterialsSolar Cell MaterialsSolar CellsSurface PassivationCrystalline Silicon Solar CellsPassivation LayersSiliconSilicon NitrideSilicon Solar CellsSilicon Wafer ProcessingSolar Cell FabricationSurface Passivation Layers
Abstract A scheme for passivating thin multi‐crystalline silicon solar cells compatible to mass production is presented. Wafers with a thickness of 180 µm were processed into solar cells. The otherwise severe bowing has been avoided by reduced aluminium coverage on the rear surface. The process scheme includes a silicon nitride firing through step for conventional screen printed contacts, where a silicon nitride layer on the rear surface acts as surface passivation layer and enables a gain in efficiency of 0.6% [abs.]. Copyright © 2007 John Wiley & Sons, Ltd.
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Fabrizio Giorgis, F. Giuliani, Candido Fabrizio Pirri et al. · Philosophical Magazine B · 1998 · 77 citations