Irradiation-induced ESR active defects in SIMOX structures

Abstract

Irradiation of single-step implanted SIMOX structures by gamma -rays to a dose of 1 Mrad(Si) results in a 2.5-fold increase in the density of dangling bonds associated with amorphous silicon in the buried oxide (BOX) and introduces a defect in both single- and multiple-implant structures at a density of (1.1 to 2.2)*10/sup 12/ cm/sup -2/. The latter is considered to be an oxygen-related double donor in silicon that becomes ionized upon irradiation. Higher gamma -ray dose generates E' defects in the BOX at a rate which indicates that the BOX may be in densified state. The results demonstrate the existence of defects which have never been observed in conventional Si/SiO/sub 2/ structures.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>