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Latest Advances and Roadmap for In-Plane and Perpendicular STT-RAM
85
Citations
2
References
2011
Year
Unknown Venue
Future Technology NodesNon-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureMulti-channel Memory ArchitectureMagnetismMemory DeviceComputational ElectromagneticsLatest AdvancesElectrical EngineeringComputer EngineeringMagnetoresistive Random-access MemoryOutline Stt-ramPerpendicular Stt-ram DevelopmentMicroelectronicsSpintronicsSpin-orbit TorqueApplied PhysicsSemiconductor Memory
STT-RAM (Spin-Transfer Torque Random Access Memory) is a second-generation magnetic random access memory (MRAM) technology that is fast, non-volatile, durable, and scalable to future technology nodes [1-2]. In this paper, we present the latest advances in in-plane and perpendicular STT-RAM development and outline STT-RAM's future prospects, applications and roadmap.
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