1996 · 30 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsIntegrated Circuit DesignIntegrated Circuit DevicesInterconnect TechnologySemiconductor Device MaterialsSolar Cell MaterialsThermal Properties Of SemiconductorsCell EfficiencyElectron Beam Irradiation EffectsHeterojunction Solar CellsSolar Cell CharacterizationSpace Power SystemsThermal Cycle AnalysisThermal Effects In Integrated CircuitsUniform Current Distribution
This paper describes the successful demonstration of high efficiency, large area monolithic triple-junction, n-on-p, GaInP/sub 2//GaAs/Ge cells. The highest cell efficiency (cell size: 2 cm/spl times/2 cm) measured to date is 25.7%, under 1 sun, AM0 illumination. A very uniform distribution of cell efficiency across a 3" diameter wafer is also achieved. The average efficiency of 164, 2 cm/spl times/2 cm triple junction cells and 52 cell-interconnect-cover (CIC) assemblies are 22.6% and 21.9%, respectively. The results of temperature coefficient, 1 MeV electron irradiation and thermal cycle measurements (for CICs) are also reported.