Publication | Closed Access
Heavy ion SEE test of 2 Gbit DDR3 SDRAM
12
Citations
7
References
2011
Year
Unknown Venue
Hardware SecurityNon-volatile MemoryElectrical EngineeringNew Generation 2EngineeringGbit Ddr3 SdramsRandom Seu ErrorsGbit Ddr3 SdramFlash MemoryApplied PhysicsComputer ArchitectureComputer EngineeringSemiconductor MemoryInstrumentationMicroelectronics
New generation 2 Gbit DDR3 SDRAMs from Micron, Samsung and Nanya have been tested under heavy ions. SEFIs significantly outweigh random SEU errors even at low LET; however, SEFIs can be mitigated by frequent re-initialization.
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