2011 · 13 citations · 7 references
EngineeringComputer EngineeringElectrical EngineeringFault ToleranceMicroelectronicsSemiconductor DevicesBuilt-in Self-testDevice CharacterizationDevice ReliabilityHeavy-ion PhysicsNoise In Electronic DevicesNoise In Semiconductor DevicesInitializationNon-volatile Memory DesignRadiation Effects On ReliabilityRadiation-hardened MemoryRadiation-hardened Memory DevicesRadiation-hardened MicroprocessorsRadiation-tolerant Semiconductor DevicesRandom Errors
New generation 2 Gbit DDR3 SDRAMs from Micron, Samsung and Nanya have been tested under heavy ions. SEFIs significantly outweigh random SEU errors even at low LET; however, SEFIs can be mitigated by frequent re-initialization.
7
Upgrades for the RADEF Facility
A. Virtanen, R. Harboe-Sørensen, Arto Javanainen et al. · 2007 · 36 citations
Radiation Characterization of 512Mb SDRAMs
R.K. Lawrence · 2007 · 34 citations
Engineering, Computer Engineering, Radiation Measurement +11
Proton and Heavy Ion Induced Semi-Permanent Upsets in Double Data Rate SDRAMs
Sensitivity of 2 Gb DDR2 SDRAMs to Protons and Heavy Ions
R. Koga, P. Yu, J. George et al. · 2010 · 20 citations
Engineering, Computer Engineering, Electrical Engineering +11