physica status solidi (a) · 1984 · 10 citations · 14 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsCrystallographyDislocation MechanicsDislocations In SemiconductorsElectron MicroscopySemiconductor DefectsStacking FaultsDark-field ImagingDefect PhysicsDefect StatesDislocation CharacterizationDislocation CoresDislocationsElectron Microscopy Of Stacking FaultsStacking Faults In Semiconductors
The defect structure of GaAs single crystals doped with tellurium to about 1019 cm−3 and deformed at 500 °C is investigated in the high-resolution electron microscope using three-beam dark-field lattice images along 〈110〉. The images of precipitates at different stages of their formation as well as of dissociated 60° dislocations, dipoles, and stacking fault tetrahedra are taken and analyzed. The succession of the precipitation stages in the tellurium-bearing phase is analyzed, too. There are discrepancies between the periodicity on direct lattice images and the interplanar distances in highly deformed regions in the crystal.
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