Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1978 · 65 citations · 5 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsCrystal StructureSemiconductor MaterialsDefects In Electronic MaterialsDislocation MechanicsDislocations In SemiconductorsSemiconductor DefectsSemiconductor PhysicsStacking FaultsDislocation PhysicsDislocationsIntrinsic Stacking FaultsPartial DislocationsStacking Fault Energy
Abstract Electron microscope observations have been made on α and β dislocations in GaAs. Using the weak-beam technique the dislocations have been found to be dissociated, the separation of the partials being the same for α and β dislocations. The intrinsic stacking-fault energy has been determined to be 48 ± 6 erg cm−2.
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On the Plasticity of Germanium and Indium Antimonide
P. Haasen · Acta Metallurgica · 1957 · 129 citations
Natural Sciences, Materials Engineering, Materials Science +11
Deformation of single crystals of gallium arsenide
D. Laister, G.M. Jenkins · Journal of Materials Science · 1973 · 78 citations
Dissociation of dislocations in GaP
Pratibha L. Gai, A. Howie · Philosophical magazine · 1974 · 27 citations