Stacking fault energy and ionicity of cubic III–V compounds

Abstract

Using weak beam electron microscopy the stacking fault energy (SFE) of III-V compounds is determined by measuring the dissociation width of edge dislocations. The SFE corrected for the lattice parameters is given in meV/atom for GaAs, GaP, GaSb, InAs, InP, and InSb. As expected there is a strong correlation of the SFE with the ionicity of the bond. The different plasticity of the compounds is traced back to different dislocation velocities.