Enhanced GaAs MESFET CAD model for a wide range of temperatures

Abstract

We describe a new and enhanced GaAs MESFET model suitable for implementation in computer aided design (CAD) software packages such as, for example, SPICE. The model accurately reproduces both above-threshold and subthreshold characteristics of GaAs MESFET's in a wide temperature range, from 77 K to 350/spl deg/C. The current-voltage characteristics are described by a single continuous, analytical expression for all regimes of operation. The physics-based model includes effects such as velocity saturation in the channel, drain induced barrier lowering, finite output conductance in saturation, bias dependent series source and drain resistances, effects of bulk charge, bias dependent average low-field mobility, frequency dependent output conductance, backgating and sidegating, and temperature dependent model parameters. The output resistance and the transconductance are also accurately reproduced, making the model suitable for analog CAD.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>