Thermal Oxidation Kinetics of Silicon in Pyrogenic  H 2 O  and 5% HCl /  H 2 O  Mixtures

Abstract

The kinetics of the thermal oxidation of silicon in and in in using a pyrogenic system have been investigated over the temperature range 900°–1100°C. Oxide thickness‐oxidation time data, rate constants, and activation energies have been obtained for (111) and (100) oriented, , n‐type silicon. Results obtained for oxidation in are very similar to those reported previously for water bubbler systems. The addition of to does not increase the silicon oxidation rate as with dry , but the rate actually decreases apparently because of the reduced vapor pressure. The also appears to reduce impurity contributions from the oxidation system.