High Electrical Performance of Wet-Processed Indium Zinc Oxide Thin-Film Transistors

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> We developed thin-film transistors (TFTs) that use solution-processed amorphous indium zinc oxide for the channels in an all-photolithographic process. The transistors, which operate in depletion mode, have excellent transfer characteristics, including saturation mobility of 6.57 <formula formulatype="inline"><tex Notation="TeX">$\hbox{cm}^{2}/ \hbox{V}\cdot\hbox{s}$</tex></formula>, threshold voltages of <formula formulatype="inline"><tex Notation="TeX">$-$</tex></formula> 0.30 V, turn-on voltages of <formula formulatype="inline"><tex Notation="TeX">$-$</tex></formula>1.50 V, on/off ratios of <formula formulatype="inline"><tex Notation="TeX">$\hbox{10}^{9}$</tex></formula>, and inverse subthreshold slopes of 0.15 V/dec. We measured the time, temperature, gate voltage, and drain-voltage dependence of the threshold voltage shift, which was 2.16 V under stress conditions. This is nearly the same as that of conventional amorphous silicon TFTs. </para>