Improved reliability of NO-nitrided SiO₂ grown on p-type 4H-SiC

Abstract

This letter demonstrates that the reliability of oxides grown on p-type 4H-SiC can be dramatically improved by NO nitridation. High field (-8 Mv/cm) room-temperature stressing and high-temperature negative-bias (250/spl deg/C, -4 MV/cm) testing were used to investigate the reliability of NO nitrided oxides. Relatively small changes in the flat-band voltage, interface-trap density and leakage current were observed after 5000 s in the case of NO nitrided oxides, while shorter stressing shifted these parameters dramatically in the case of N annealed control samples.