EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyGate Drive CircuitsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect Transistors
This paper presents a new method of enhancing the SOA of n-channel Ldmos transistors. Attention is focused on those applications where “Electrical SOA” is important and where the power pulse time is typically a few µs or less. Typical applications include gate drives, H-bridge commutation, and self-protection against ESD pulses.
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Kirk effect limitations in high voltage IC's
A.W. Ludikhuize · 2002 · 87 citations
Safe operating area - a new frontier in Ldmos design
P.L. Hower · 2003 · 69 citations
Snapback and safe operating area of LDMOS transistors
P.L. Hower, S. Merchant · 2003 · 54 citations
Engineering, Electrical Engineering, Electronic Materials +12