Modeling and characterization of dielectric-charging effects in RF MEMS capacitive switches

Abstract

For the first time, charging and discharging of traps in the dielectric of state-of-the-art RF MEMS capacitive switches were characterized in detail. Densities and time constants of different trap species were extracted under different control voltages. It was found that, while charging and discharging time constants are relatively independent of control voltage, steady-state charge densities increase exponentially with control voltage. A simple charge model was constructed to predict the amount of charge injected into the dielectric and the corresponding shift in actuation voltage. Good agreement was obtained between the model prediction and experimental data.