A Monte Carlo Study of $\hbox{Hg}_{0.7}\hbox{Cd}_{0.3}\hbox{Te}$ e-APD

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> A simple Monte Carlo model is developed for understanding the multiplication process in HgCdTe infrared avalanche photodiodes and the impact of physical and technological parameters. A good agreement is achieved between simulations and experimental measurements of gain and excess noise factor. In both cases, an exponential gain and extremely low noise—<formula formulatype="inline"><tex Notation="TeX">$F \sim \hbox{1}$</tex></formula> for multiplication gains up to 1000—were observed on 5.1-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> cutoff devices at 77 K, indicative of a single carrier impact ionization. A comparison study is presented to explain the effect of different combinations of scattering processes on the avalanche phenomenon in HgCdTe. </para>