Design implications of memristor-based RRAM cross-point structures

Emerging non-volatile memory (NVM) technologies are getting mature in recent years. These emerging NVM technologies have demonstrated great potentials for the universal memory hierarchy design. Among all the technology candidates, resistive random-access memory (RRAM) is considered to be the most promising as it operates faster than phase-change memory (PCRAM), and it has simpler and smaller cell structure than magnetic memory (MRAM or STT-RAM). In contrast to a conventional MOS-accessed memory cell, memristor-based RRAM has the potential of forming a cross-point structure without using access devices, achieving ultra high density. The cross-point structure, however, brings extra challenges to the peripheral circuitry design. In this work, we study the memristor-based RRAM array design and focus on the choices of different peripherals to achieve the best trade-off among performance, energy, and area. In addition, a system-level model is built to estimate the performance, energy, and area values.