Mechanism and Modeling of PMOS NBTI Degradation with Drain Bias

Abstract

A new mechanism for PMOS NBTI (Negative Biased Temperature Instability) with drain bias is presented. The turn-around behavior of device degradation is explained. While drain bias reduces gate oxide voltage and causes less NBTI, the channel-hot-hole enhances the NBTI degradation. For the first time, a semi-empirical model is proposed that fits well with the experimental data, including various parameters, such as temperature, voltage, channel length, and drive current.