28nm metal-gate high-K CMOS SoC technology for high-performance mobile applications

Abstract

An industry leading 28nm high-performance mobile SoC technology featuring metal-gate/high-k process is presented. The technology is optimized to offer wide power-to-performance transistor dynamic range and highest wired gate density with superior low-R/ELK interconnects, critical for next generation mobile computing/SOC applications. Through process and design optimization, historical trend is maintained for gate density and SRAM cell sizes. Variations control strategy through process and design collaboration is also described.