IEEE Transactions on Electron Devices · 1997 · 85 citations · 18 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDistortion AnalysisField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsField-effect Transistor SimulationGate Oxide DegradationMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingOhmic ConductionOhmic MaterialsSeries ResistanceShort-channel Mobility Degradation
Compact MOSFET models in contemporary circuit simulators fail to accurately describe distortion effects. In the ohmic region of the MOSFET, this failure is mainly due to inaccurate modeling of the gate-field dependent mobility degradation effect. In this paper a new model for mobility degradation Is introduced which gives a major improvement in distortion analysis in the linear region for both n-type and p-type MOS transistors. Incorporating a gate voltage dependent series resistance, this model even gives good results for very short channel length devices.
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