IEEE Microwave and Guided Wave Letters · 1993 · 110 citations · 5 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationDevice ModelingHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsCapacitance ModelingEquivalent Circuit AnalysisEquivalent Circuit ModelingField-effect Transistor Transfer CharacteristicsLow-frequency ModelingParasitic Extraction
An improved equivalent circuit for MESFET and HEMT devices under zero drain bias pinched-off conditions is proposed. Parasitic gate and drain capacitances evaluated from low-frequency Y parameters using this circuit are approximately equal under conditions where equality would be expected from bond pad geometry considerations. In contrast, the previously used circuit considerably overestimates parasitic drain capacitance.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
5