Twelve-channel individually addressable InGaAs/InP p-i-n photodiode and InGaAsP/InP LED arrays in a compact package

Abstract

We report on monolithically integrated 1 × 12 arrays of In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</inf> As p-i-n detectors and InGaAsP LED's for use in long-wavelength optical communication system applications. The detectors are sensitive in the wavelength region of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.95-1.65 \mu</tex> m, and the LED's emit at 1.30 μm. The devices utilize Si V-block fiber array connectors with one end polished at a 45° angle with respect to the fiber axis such that the optical path is bent by 90° to afford coupling laterally to the photonic device. The resultant structures are built in a 14-pin dual-in-line (DIP) compact metal package, and are capable of operation at least up to 200 Mbit/s.