Monolithically integrated 1 × 12 array of planar InGaAs/InP photodiodes

Abstract

We describe the fabrication and performance of monolithically integrated, 1 × 12 arrays of InGaAs/InP p-i-n photodiodes. These devices are completely optically and electrically interfaced for use in fiber-optic systems. For each element of the array, at -5 V, the dark current is <20 nA, and the total capacitance is <2.5 pF. The external coupling efficiency at 1.3 μm is >75 percent for every diode in the array. We have also measured the coupling capacitance between adjacent devices, and found it to be <0.1 pF.