IEEE Microwave and Guided Wave Letters · 1993 · 21 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsSemiconductor HeterostructuresBandwidthDistributed AmplifiersGainHigh-electron-mobility TransistorsHigh-gain AmplifiersMicrowave TransistorsNoise FigureNoise Figure Analysis
The results of the first monolithic matrix distributed amplifier fabricated using pseudomorphic high-electron-mobility transistor (HEMT) technology are reported. The HEMT matrix amplifier obtains a combination of high gain, wide bandwidth, and reasonable IP3 and noise figure. The best gain response is 20 dB from 6 to 21 GHz. The noise figure is 5.5 dB and the third-order intercept point is 21 dBm. In comparison to GaAs HBT and MESFET technologies, the HEMT matrix distributed amplifier shows the best promise for wideband millimeter-wave applications.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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