2-19-GHz low-DC power and high-IP/sub 3/ monolithic HBT matrix amplifier

Abstract

The design and performance of the first wideband, low-DC power and high-IP/sub 3/ monolithic matrix amplifier using GaAs-AlGaAs heterojunction bipolar transistors (HBTs) is reported. The amplifier uses four 2*10 mu m/sup 2/ quad-emitter HBTs in a 2*2 matrix configuration and has a measured gain of 9.6+or-0.9 dB over the 2-19-GHz frequency band. Measured output IP/sub 3/ and 1-dB compression point are 26 dBm and 13 dBm, respectively, at 18 GHz. The total DC-power dissipation is less than 200 mW. The input and output return losses are better than -9.5 dB within the 2-16-GHz bandwidth.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>