Polycrystalline diamond pressure sensor

Abstract

The piezoresistance and other characteristics of boron doped polycrystalline diamond films (PDF's) were determined by analyzing free-standing films that had been formed on silicon. These structures were adhered to a dielectric substrate, and from bending stresses a gauge factor was estimated. Subsequently, a monolithic all-diamond pressure sensor was designed and fabricated, whereby doped diamond resistors reside on a dielectric diamond substrate diaphragm. The process and piezoresistance behavior of their structure is described.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>