Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C₄H₉GeH₃

Abstract

Ge homoepitaxial films are grown at low growth temperature of 320°C by metal-organic chemical vapor deposition (MOCVD) using tertiarybutylgermane (t-C4H9GeH3). We also performed ab initio calculations in order to reveal the chemical reaction for the epitaxial growth. As the result, it was revealed that the t-C4H9GeH3 was most likely decomposed into germane (GeH4) and isobutene [CH2=C(CH3)2] through the β-hydrogen elimination. We considered that this chemical nature allowed the growth temperature as low as that obtained by GeH4 precursor with sufficiently suppressed C impurity incorporation.