A Q-band monolithic three-stage amplifier

Abstract

A Q-band high-electron-mobility transistor (HEMT) amplifier was designed and fabricated. This three-stage circuit utilizes 0.2- mu m*60- mu m micron HEMT devices. The amplifier has a measured gain of greater than 10 dB from 42 to 47.5 GHz and a peak gain of 16 dB at 44.5 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>