Hydrogen Plasma Etching of Organics

Abstract

The use of hydrogen plasmas for reactive ion etching of organic films has been characterized. It was found that anisotropic etching could be easily achieved, but with relatively slow etch rates (< 300Å/min). The effect of variables (such as pressure, temperature, and power) and chemistry changes (such as the addition of and ) were studied and discussed. In addition, the applications of contact‐hole etching and trilevel resist processing are considered.