Electrical properties of heavily Al-doped ZnSe grown by molecular beam epitaxy

Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors

D. J. Chadi · Physical Review Letters · 1994 · 213 citations

Engineering, Materials Science, Physics +15

Characteristics of Cl-doped ZnSe layers grown by molecular-beam epitaxy

Kazuhiro Ohkawa, Tsuneo Mitsuyu, Osamu Yamazaki · Journal of Applied Physics · 1987 · 177 citations

Natural Sciences, Materials Science, Physics +17

Phosphorus Acceptor Levels in ZnSe Grown by Molecular Beam Epitaxy

Takafumi Yao, Yasumasa Okada · Japanese Journal of Applied Physics · 1986 · 87 citations

Engineering, Materials Engineering, Materials Science +15

High-quality ZnSe thin films grown by molecular beam epitaxy

Takafumi Yao, Mutsuo Ogura, Seiji Matsuoka et al. · Applied Physics Letters · 1983 · 78 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ga-Doped ZnSe Grown by Molecular Beam Epitaxy for Blue Light Emitting Diodes

T. Niina, Tetsuo Minato, Kiyoshi Yoneda · Japanese Journal of Applied Physics · 1982 · 74 citations

Engineering, Materials Engineering, Materials Science +17