IEE Proceedings - Optoelectronics · 2002 · 36 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsDopingOptical Properties Of SemiconductorsOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsSemiconductor PhysicsCapture Cross SectionsDevice FabricationDoping Effects On Device PerformanceLow-temperature GrowthOptoelectronic PropertiesRecombination LandscapeRecombination LossesSemiconductor Characterization
Structural, electrical and recombination properties of Be-doped low-temperature MBE grown (LTG) GaAs have been investigated by using a number of different experimental techniques. These properties were analysed with respect to the applications of LTG GaAs in ultrafast optoelectronic devices. It has been found that a moderate Be-doping improves the structural quality of the layers and does not affect their semi-insulating behaviour. Electron and hole capture cross-sections, critical parameters for the design of optoelectronic devices from LTG GaAs, equal to σn=1.1×10−13 and σp=1.8×10−15 cm2 were also determined.
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New MBE buffer used to eliminate backgating in GaAs MESFETs
F. W. Smith, A. R. Calawa, C.-L. Chen et al. · IEEE Electron Device Letters · 1988 · 623 citations
Photomixing up to 3.8 THz in low-temperature-grown GaAs
E. R. Brown, K. A. McIntosh, K. B. Nichols et al. · Applied Physics Letters · 1995 · 487 citations