Atomic Transport in LaAlO[sub 3] Films on Si Induced by Thermal Annealing

Abstract

films sputter-deposited on Si were submitted to rapid thermal annealing at 800 and . Atomic transport and chemical changes were investigated using ion beam analysis and X-ray photoelectron spectroscopy. Annealing induced La and Al losses or their migration into a newly formed interfacial layer and Si migration into the film. The mechanism of Si incorporation into the film is influenced by the annealing atmosphere. These instabilities were hampered by a thermal nitridation in at performed prior to rapid thermal annealing, indicating a possible route for producing a thermally stable La-based high-κ gate dielectric.