Short pulse electron beam excitation of the high-pressure atomic Ne laser

Abstract

The high-pressure atomic Ne laser operates on four visible transitions between the 3p and 3s manifolds. Oscillation at 585 nm (3p′[1/2]0→3s′[1/2]10) at efficiencies of ≳1% have been demonstrated by others. The upper laser level is believed to be populated by dissociative recombination of Ne2+, while state-selective Penning reactions relax the lower laser levels. To investigate these pumping mechanisms, experimental and modeling studies have been performed on a short pulse e-beam excited Ne laser using He/Ne/Ar mixtures. We found that the electron temperature in the afterglow following the e-beam pulse largely determines the time at which oscillation starts. The electron temperature during the afterglow is partly controlled by a slow relaxation of excited states in Ar. Laser oscillation does not occur until these manifolds are depleted and the electron temperature decreases, thereby increasing the rate of dissociative recombination.