Excitonic emission in cadmium telluride

Abstract

Abstract The photoluminescent properties of free and bound excitons in high‐purity p‐ and n‐type CdTe single crystals are investigated in detail in connection with the dependence on excitation intensity, temperature, impurity‐doping, and uniaxial stress. Intense free‐exciton emission is observed in the single crystals grown from solutions and vapor epitaxial methods. From the thermal dissociation processes and the analysis on the basis of the effective mass argument developed by Sharma and Rodriguez and by Hopfield, an assignment of exciton emission lines is tried.